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A processor die photographed at an angle

The workbench

One workspace, from deck to decision.

Every capability below is in the current private build. Screenshots were captured during local browser verification using test projects and real solver results — not production data.

01 · Deck editor

Define the device in text you can read.

Geometry, materials, contacts, doping and sweeps live in one input deck, with variables that become form fields and search ranges.

  • Line numbers, validation and jump-to-error
  • Import and export .deck files
  • Solver output streams below the editor
Greater Today TCAD deck editor with a numbered input deck and live solver output
FIG. 1The deck editor during a run, with solver iterations streaming in the output dock.

02 · Structure

See the device before you simulate it.

Regions and electrodes are drawn from the deck, and you can draw new ones directly — edges snap to existing features.

  • Layer view and true-scale view
  • Region, electrode and sweep summary
  • Mesh size estimate before running
Greater Today TCAD structure view showing an NMOS gate dielectric, silicon region and four contacts
FIG. 2Layer view exaggerates thin layers — depth is not to scale, and the mesh count shown is an estimate.

03 · Results

Metrics, curves and the files behind them.

Each run extracts the figures device engineers look for and keeps the inputs that produced them.

  • Transfer, band diagram, 2D map and structure tabs
  • Curve CSV, result JSON, input and material snapshot, full solver log
  • Search from any design in one click
Greater Today TCAD results for a short NMOS transfer sweep with transconductance plot
FIG. 3A short sweep at Vg = 1.0–1.2 V, Vd = 1 V. Metrics from a range this narrow don't characterise the full device — the off current shown is simply the sweep's first sample.

04 · Compare

Put designs side by side, honestly.

Overlay up to four runs of the same device type. Every curve keeps its run name and bias conditions.

  • Operating points and full sweeps
  • Partial results remain visibly marked
  • Drain current normalised per mm of width
Greater Today TCAD comparison of two target-search trials at a drain bias of one volt
FIG. 4Two target-search trials gave about 119 and 127 mA/mm against a target of 110 ± 2 mA/mm. Neither met it — and the tool reports that rather than rounding it away.

Under the hood

How a run flows through the platform.

Each simulation runs in its own solver process, so a long sweep never blocks the workbench and a failed run never takes others down.

Engineer→Web workbench · AI assistant→REST API→Job queue→DEVSIM solver process
Target search→Bayesian optimiser (Optuna TPE)→Only the sweeps its metrics need→Checkpointed trials
Reproducible

Frozen inputs

Each run records its input specification and a copy of the materials it used, so editing a material later never changes an old result.

Robust

Automatic bias stepping

Sweeps ramp bias with automatic step control. If a point fails to converge, completed points are kept and the run is marked partial.

Bounded

Validated before queueing

Invalid geometry, expressions and sweep ranges are rejected before a job starts — up to 1,000 points per sweep and 10,000 per job.

Outputs

Take your results anywhere.

Every run downloads in open formats, ready for your own scripts, notebooks or reports.

Curve CSVCurve data with explicit bias and current units; missing points stay blank
Result JSONExtracted metrics, warnings and curve data
Input JSONThe exact input specification, including materials
Solver logThe full solver log for the run
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Working on GaN or silicon devices?

We're opening the private beta to a small number of labs and teams. Tell us what you simulate.

Request accessEmail us